DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
FET Type |
N-channel |
Continuous Drain Current (Id@25(C)) |
4.5A |
RDS(on) (Max) @ Id,Vgs |
1.5Ω @2.7A, 10V |
Drain - Source Voltage |
500V |
Series |
- |
VGS(th) @Id |
2 - 4V @250uA |
Case Style |
TO-220 |
Mounting Type |
Through Hole |
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