DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as
automotive, DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
FET Type |
N-channel |
Continuous Drain Current (Id@25(C)) |
50A |
RDS(on) (Max) @ Id,Vgs |
22mΩ @50A,10V |
Drain - Source Voltage |
60V |
Series |
power MOSFETs |
VGS(th) @Id |
2 - 4V @250uA |
Case Style |
TO-220 |
Mounting Type |
Through Hole |