FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
• Motor Drives
• Battery Chargers
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
FET Type |
N-channel |
Continuous Drain Current (Id@25(C)) |
5.5A |
RDS(on) (Max) @ Id,Vgs |
1000mΩ @3.3A,10V |
Drain - Source Voltage |
400V |
Series |
HEXFET |
VGS(th) @Id |
2 - 4V @250uA |
Case Style |
TO-220 |
Mounting Type |
Through Hole |